Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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BS107AG
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onsemi
MOSFET N-CH 200V 250MA TO92-3
bs107-d.pdf
9999
MOSFET N-CH 200V 250MA TO92-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Product Status
Obsolete
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
3V @ 1mA
Package
Bulk
Supplier Device Package
TO-92 (TO-226)
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-226-3, TO-92-3 Long Body
Base Product Number
BS107
Mfr
onsemi
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
6.4Ohm @ 250mA, 10V
Vgs (Max)
±20V
FET Feature
-
Series
-
FET Type
N-Channel
Power Dissipation (Max)
350mW (Ta)
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