sales1@ytxelec.com
+86 13302430104
0 item (s)
RFQ Inquiry

Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. 2SK4197FS
2SK4197FS
2SK4197FS
2SK4197FS
Favorite Products
2SK4197FS
2SK4197FS
onsemi
MOSFET N-CH 600V 3.3A TO220-3
Transistors - FETs, MOSFETs - Single
mosfets?documentNotFound=3&documentId=79431
9999
MOSFET N-CH 600V 3.3A TO220-3
9999 In Stock
More quantities are on the way.
Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
3.3A (Tc)
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Rds On (Max) @ Id, Vgs
3.25Ohm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
2SK4197
FET Type
N-Channel
Package
Tube
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Supplier Device Package
TO-220-3
Series
-
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 30 V
Package / Case
TO-220-3
Product Status
Obsolete
Vgs (Max)
±30V
FET Feature
-
Vgs(th) (Max) @ Id
-
Mounting Type
Through Hole
Mfr
onsemi
Power Dissipation (Max)
2W (Ta), 28W (Tc)
Operating Temperature
150°C (TJ)
Related Products
TK7A90E,S4X

Toshiba Semiconductor and Storage
TPC8113(TE12L,Q)

Toshiba Semiconductor and Storage
FQB3N60CTM

onsemi
BSC042N03ST

Infineon Technologies
PH2030AL,115

NXP USA Inc.
FDMS5352

onsemi
SQJ418EP-T2_GE3

Vishay Siliconix
STB6N65K3

STMicroelectronics

lazy img
Quality Guarantee
Trusted global supply networks
lazy img
Competitive Pricing
Reducing your business costs
lazy img
Express Delivery
Reliable global express services
lazy img
Customer Support
Friendly 24/7 customer support
Support
Resources
Contact Us
Rm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong Kong
2 1 3

TOP
RFQ List ( 0 items)