Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdAbout UsRm 705, 7/F, Fa Yuen Comm Bldg, No. 75-77, Fa Yuen Street, Mong Kok, Kln, Hong KongHeadquartered in Shenzhen, China with branch in Hong Kong, China, Hong Kong Yatexin Electronics Co., Ltd. is recommended to be a leader and innovator in professional distribution of Electronic Components. We specialized in providing passive board level components to OEMs and CEMs. Luckvenie has been always customer-driven and quality focused. We offer a wide selection of electronic components in stock with 24/7 order processing and rapid delivery.Hong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin Electronics Co., LtdHong Kong Yatexin

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2N7000
2N7000
Diotec Semiconductor
MOSFET, TO-92, 60V, 0.2A, N, 0.3
2n7000.pdf
9999
MOSFET, TO-92, 60V, 0.2A, N, 0.3
9999 In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Series
-
Drain to Source Voltage (Vdss)
60 V
FET Feature
-
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Technology
MOSFET (Metal Oxide)
Mfr
Diotec Semiconductor
Product Status
Active
Vgs(th) (Max) @ Id
3V @ 1mA
Package
Strip
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs (Max)
±20V
Power Dissipation (Max)
350mW (Ta)
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